Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Modeling of conduction properties of Schottky diodes in Polymer

(1) Université Mohamed Premier, Faculté des Sciences, Dépt de Physique, (L.E.A.A), Route Sidi Maafa BP 524, Oujda, Morocco. (2) Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), 7 Avenue du colonel Roche, Toulouse 31077, France. * E. mail : [email protected] This work has been supported by : •le comité Franco-Marocain ‘Action Intégrée’, N° MA/03/78, •le Programme Thématique d’Ap...

Graphene-silicon Schottky diodes.

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

Electrothermal Model of SiC Power Schottky Diodes

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky di...

Junction investigation of graphene/silicon Schottky diodes

Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed bet...